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MRF5035

Motorola
Part Number MRF5035
Manufacturer Motorola
Description N-CHANNEL BROADBAND RF POWER FET
Published Feb 27, 2006
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5035/D The RF MOSFET Line RF Power Field Effect Tran...
Datasheet PDF File MRF5035 PDF File

MRF5035
MRF5035

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz.
The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.
5 volt mobile, and base station FM equipment.
• Guaranteed Performance at 512 MHz, 12.
5 Volt Output Power — 35 Watts Power Gain — 6.
5 dB Min Efficiency — 50% Min • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stability • All Gold Metal for Ultra Reliability • Capable of Handling 20:1 Load VSWR, @ 15.
5 Volt, 512 MHz, 2 dB Overdrive • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MRF5035 35 W, 12.
5 VOLTS, 512 MHz N–CHANNEL BROADBAND RF POWER FET CASE 316–01, STYLE 3 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RθJC Symbol Min Typ Value 36 36 ± 20 15 97 0.
56 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Max 1.
8 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.
) Characteristic Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 20 mAdc) Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 36 — — — — — — 5 5 Vdc mAdc µAdc (continued) NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
REV 6 RF DEVICE DATA ©MOTO...


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