RF & MICROWAVE DISCRETE LOW POWER
TRANSISTORS
MRF581 MRF581G MRF581A MRF581AG
*G Denotes RoHS Compliant, Pb free Terminal Finish
Features
• Low Noise - 2.
5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.
5 dB @ 500 MHz • Ftau - 5.
0 GHz @ 10v, 75mA • Cost Effective MacroX Package
Macro X
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.
0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
MRF581 MRF581A 18 15 30 2.
5 200
Unit Vdc Vdc Vdc mA
Thermal Data
P
D
P
D
Tstg
Total Device Dissipation @ TC = 50ºC Derate above 50ºC
Total Dev...