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MRF5812

Part Number	MRF5812
Manufacturer	ASI
Description	NPN Silicon RF Microwave Transistor
Published	Mar 23, 2006
Detailed Description	MRF5812 NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MRF5812 is Designed for high current, low power, low n...
Datasheet	MRF5812 PDF File

Overview

MRF5812 NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.
0 GHz.
PACKAGE STYLE SO-8 FEATURES: • Low Noise – 2.
5 dB @ 500 MHz • Ftau – 5.
0 GHz @ 10 V, 75 mA • Cost Effective SO-8 package MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS 200 mA 30 V 15 V 2.
5 V 1.
25 W @ TC = 25 °C CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE COB FTAU NFmin GNF GU max MSG 2 |S21| TC = 25 °C NONETEST CONDITIONS IC = 1.
0 mA IC = 5.
0 mA IE = 0.
1 mA VCB = 15 V VCE = 2.
0 V VCE = 5.
0 V VCB = 10 V VCE = 10 V IC = 75 mA IC = 50 mA f = 1.
0 MHz f = 1.
0 GHz MINIMUM TYPICAL MAXIMUM 30 15 2.
5 0.
1 0.
1 50 1.
4 5.
0 2.
0 13 3.
0 200 2.
0 U...

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