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MRF581A

Part Number	MRF581A
Manufacturer	Microsemi
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Published	Dec 11, 2016
Detailed Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Termin...
Datasheet	MRF581A PDF File

Overview

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish Features • Low Noise - 2.
5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.
5 dB @ 500 MHz • Ftau - 5.
0 GHz @ 10v, 75mA • Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.
0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current MRF581 MRF581A 18 15 30 2.
5 200 Unit Vdc Vdc Vdc mA Thermal Data P D P D Tstg Total Device Dissipation @ TC = 50ºC Derate above 50ºC Total Device Dissipation @ TC = 25ºC Derate above 25ºC Storage Junction Temperature Range TJmax Maximum Junction Temperature Revision A- December 2008 2.
5 25 1.
25 10 -65 to +150 150 Microsemi reserves the right to change, without notice, the specifications and information contained herein V...

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