MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF553/D
The RF Line
NPN Silicon RF Low Power
Transistor
Designed primarily for wideband large signal predriver stages in the VHF frequency range.
• Specified @ 12.
5 V, 175 MHz Characteristics Output Power = 1.
5 W Minimum Gain = 11.
5 dB Efficiency 60% (Typ)
• Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability • Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MRF553
1.
5 W, 175 MHz RF LOW POWER
TRANSISTOR NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current —...