Part Number
|
2SK2016 |
Manufacturer
|
Panasonic |
Description
|
Silicon N-Channel Power F-MOS |
Published
|
Dec 12, 2016 |
Detailed Description
|
Power F-MOS FETs
2SK2016
Silicon N-Channel Power F-MOS
s Features
q Low ON-resistance RDS(on) : RDS(on)1= 0.315Ω(typ) ...
|
Datasheet
|
2SK2016
|
Overview
Power F-MOS FETs
2SK2016
Silicon N-Channel Power F-MOS
s Features
q Low ON-resistance RDS(on) : RDS(on)1= 0.
315Ω(typ) q High-speed switching : tf= 38ns(typ) q No secondary breakdown q For low-voltage drive(VGS= 4V) q Taping supply possible
s Applications
q DC-DC converter q Non-contact relay q Solenoid drive q Motor drive
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
at 4V drive
Drain current
DC
Pulse
Allowable power dissipation
TC= 25˚C Ta=25˚C
Channel temperature
Storage temperature
Symbol VDSS VGSS
ID
IDP
PD
Tch Tstg
Rating 100 ±20 ±3 ±5 ±10 10 0.
75 150
–55 to +150
Unit V V
A
A
W
˚C ˚C
s Electrical Characteristics (T...
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