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2SK2009

Toshiba Semiconductor
Part Number 2SK2009
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Appli...
Datasheet PDF File 2SK2009 PDF File

2SK2009
2SK2009

Overview
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance.
• Low gate threshold voltage: Vth = 0.
5 to 1.
5 V • Excellent switching times: ton = 0.
06 μs (typ.
) toff = 0.
12 μs (typ.
) • Low drain-source ON resistance: RDS (ON) = 1.
2 Ω (typ.
) • Small package • Enhancement-mode Marking Equivalent Circuit 2SK2009 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol Rating Unit VDS VGSS ID PD Tch Tstg 30 V ±20 V 200 mA 200 mW 150 °C −55 to 150 °C JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.
012 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
Start of commercial production 1992-04 1 2014-03-01 2SK2009 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol Test Condition Min Typ.
Max Unit IGSS VGS = ±10 V, VDS = 0 ⎯ ⎯ ±0.
1 μA V (BR) DSS ID = 1 mA, VGS = 0 30 ⎯ ⎯ V IDSS VDS = 30 V, ...


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