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2SK2007

Hitachi Semiconductor
Part Number 2SK2007
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOS FET
Published Mar 30, 2005
Detailed Description 2SK2007 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High spe...
Datasheet PDF File 2SK2007 PDF File

2SK2007
2SK2007

Overview
2SK2007 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3P D G 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source S 2SK2007 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 250 ±30 20 80 20 100 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2007 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 250 ±30 — — 2.
0 — 9.
0 — — — — — — — — — Typ — — — — — 0.
12 14 2340 1000 160 30 125 190 100 1.
2 120 Max — — ±10 250 3.
0 0.
15 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 20 A, VGS = 0 I F = 20 A, VGS = 0, diF / dt = 100 A / µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS =200 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 10 A VGS = 10 V*1 I D = 10 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 10 A VGS = 10 V RL = 3 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1.
Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK2007 Power vs.
Temperature Derating 150 Channel Dissipation Pch (W) Drain Current I D (A) Maximum Safe Operation Area 100 30 1 10 0 10 µ µ s s PW m s 100 10 ...


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