Part Number
|
CJD02N60 |
Manufacturer
|
JCET |
Description
|
N-Channel MOSFET |
Published
|
Dec 19, 2016 |
Detailed Description
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD02N60 N-Channel Power MOSFET
...
|
Datasheet
|
CJD02N60
|
Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD02N60 N-Channel Power MOSFET
V(BR)DSS
600V
RDS(on)MAX
4.
4Ω@10V
ID
2A
TO-251S
General Description
The high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage-blocking capability without degrading
performance over time.
In addition , this advanced MOSFET is designed
1.
GATE 2.
DRAIN
to withstand high energy in avalanche and commutation modes .
The 3.
SOURCE
new energy efficient design also offers a drain-to-source diode with a
12
fast recovery time.
Designed for high voltage, high speed switching
applications in power suppliers, converters and PWM motor contr...
Similar Datasheet