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CJD02N60

JCET
Part Number CJD02N60
Manufacturer JCET
Description N-Channel MOSFET
Published Dec 19, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD02N60 N-Channel Power MOSFET ...
Datasheet PDF File CJD02N60 PDF File

CJD02N60
CJD02N60

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-251S Plastic-Encapsulate MOSFETS CJD02N60 N-Channel Power MOSFET V(BR)DSS 600V RDS(on)MAX   4.
4Ω@10V ID 2A TO-251S   General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
In addition , this advanced MOSFET is designed 1.
GATE 2.
DRAIN to withstand high energy in avalanche and commutation modes .
The 3.
SOURCE new energy efficient design also offers a drain-to-source diode with a 12 fast recovery time.
Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
FEATURES z Robust High Voltage Termination z Avalanche Energy Specified z Sour...


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