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CJD02N65

JCET
Part Number CJD02N65
Manufacturer JCET
Description N-Channel MOSFET
Published Dec 19, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD02N65 V(BR)DSS 650 N-Channe...
Datasheet PDF File CJD02N65 PDF File

CJD02N65
CJD02N65

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-251S Plastic-Encapsulate MOSFETS CJD02N65 V(BR)DSS 650 N-Channel Power MOSFET RDS(on)MAX   4.
4Ω@10V ID 2A TO-251S   GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode fast recovery time.
Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified 1.
GATE 2.
DRAIN 3.
SOURCE 1 23 MARKING EQUIVALENT CIRCUIT CJD02N65 z XXX CJD02N60 = Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current P...


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