STPSC20H12
Datasheet
1200 V power
Schottky silicon carbide diode
Features
A K
K
TO-220AC
A K
K K
A NC
• • • • •
•
No or negligible reverse recovery Switching behavior independent of temperature Robust high voltage periphery Operating from -40 °C to 175 °C Low VF ECOPACK® compliant component
D²PAK Description
DO-247 LL
A
K
The SiC diode, available in TO-220AC, D²PAK and TO-247 LL, is an ultrahigh performance power
Schottky rectifier.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF
Schottky diode structure with a 1200 V rating.
Due to the
Schottky construction, no recovery is shown at turn-off and ringing patterns are ...