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STPSC20H12

STMicroelectronics
Part Number STPSC20H12
Manufacturer STMicroelectronics
Description power Schottky silicon carbide diode
Published Jan 7, 2017
Detailed Description STPSC20H12 Datasheet 1200 V power Schottky silicon carbide diode Features A K K TO-220AC A K K K A NC • • • • • •...
Datasheet PDF File STPSC20H12 PDF File

STPSC20H12
STPSC20H12

Overview
STPSC20H12 Datasheet 1200 V power Schottky silicon carbide diode Features A K K TO-220AC A K K K A NC • • • • • • No or negligible reverse recovery Switching behavior independent of temperature Robust high voltage periphery Operating from -40 °C to 175 °C Low VF ECOPACK® compliant component D²PAK Description DO-247 LL A K The SiC diode, available in TO-220AC, D²PAK and TO-247 LL, is an ultrahigh performance power Schottky rectifier.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are ...


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