MOSFET
FDMS8460 N-Channel Power Trench® MOSFET October 2014 FDMS8460 N-Channel Power Trench® MOSFET 40V, 49A, 2.2m: Features General Description Max rDS(on) = 2.2m: at VGS = 10V, ID = 25A Max rDS(on) = 3.0m: at VGS = 4.5V, ID = 21.7A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design 100% UIL tested This N-Channel M...
Fairchild Semiconductor