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FDMS8460

ON Semiconductor
Part Number FDMS8460
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 20, 2023
Detailed Description MOSFET - N‐Channel, POWERTRENCH) 40 V, 49 A, 2.2 mW FDMS8460 General Description This N−Channel MOSFET is produced usi...
Datasheet PDF File FDMS8460 PDF File

FDMS8460
FDMS8460

Overview
MOSFET - N‐Channel, POWERTRENCH) 40 V, 49 A, 2.
2 mW FDMS8460 General Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features • Max rDS(on) = 2.
2 mW at VGS = 10 V, ID = 25 A • Max rDS(on) = 3.
0 mW at VGS = 4.
5 V, ID = 21.
7 A • Advanced Package and Silicon combination for low rDS(on) • MSL1 robust package design • 100% UIL tested • RoHS Compliant Applications • DC−DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V ID Drain Current: A − Continuous (Package limited) TC = 25°C 49 − Continuous (Silicon limited) TC = 25°C 167 − Continuous TA = 25°C (Note 1a) 25 − Pulsed 160 EAS Single Pulse Avalanche Energy (Note 3) 864 mJ PD Power Dissipation: TC = 25°C TA = 25°C (Note 1a) W 104 2.
5 T...


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