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FDMS8460

Fairchild Semiconductor
Part Number FDMS8460
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 10, 2017
Detailed Description FDMS8460 N-Channel Power Trench® MOSFET October 2014 FDMS8460 N-Channel Power Trench® MOSFET 40V, 49A, 2.2m: Feature...
Datasheet PDF File FDMS8460 PDF File

FDMS8460
FDMS8460

Overview
FDMS8460 N-Channel Power Trench® MOSFET October 2014 FDMS8460 N-Channel Power Trench® MOSFET 40V, 49A, 2.
2m: Features General Description „ Max rDS(on) = 2.
2m: at VGS = 10V, ID = 25A „ Max rDS(on) = 3.
0m: at VGS = 4.
5V, ID = 21.
7A „ Advanced Package and Silicon combination for low rDS(on) „ MSL1 robust package design „ 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application „ DC - DC Conversion „ RoHS Compliant Top Bottom Pin 1 S S S G D D D D Power 56 S S S G D D D D MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy P...


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