FDN86246 N-Channel PowerTrench® MOSFET December 2010 FDN86246 N-Channel PowerTrench® MOSFET 150 V, 1.
6 A, 261 m: Features General Description „ Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.
6 A „ Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.
4 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Application „ PD Switch „ 100% UIL tested „ RoHS Compliant MOSFET Maximum Ratings TA = 25 °C unless otherwise ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)