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FDN86246

ON Semiconductor
Part Number FDN86246
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 25, 2023
Detailed Description MOSFET – N-Channel, POWERTRENCH) 150 V, 1.6 A, 261 mW FDN86246 General Description This N−Channel MOSFET is produced us...
Datasheet PDF File FDN86246 PDF File

FDN86246
FDN86246

Overview
MOSFET – N-Channel, POWERTRENCH) 150 V, 1.
6 A, 261 mW FDN86246 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.
Features • Max rDS(on) = 261 mW at VGS = 10 V, ID = 1.
6 A • Max rDS(on) = 359 mW at VGS = 6 V, ID = 1.
4 A • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability in a Widely Used Surface Mount Package • Fast Switching Speed • 100% UIL Tested • Pb−Free, Halide Free and RoHS Compliant Application • PD Switch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.
) Symbol Parameter Value Unit VDS Drain−Source Voltage VGS Gate−Source Voltage ID Drain Current – Continuous (Note 1a) – Pulsed 150 V ±20 V A 1.
6 6 EAS Single Pulse Avalanche Energy (Note 3) 13 mJ PD Maximum Power Dissipation (Note 1a) (Note 1b) W 1.
5 0.
6 TJ, TSTG Operating and Storage Junction Temperature Range ...


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