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C5819

2SC5819

Description

2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 High-Speed Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 45 ns (typ.) Absolute Maximum Ratings (Ta =...


Toshiba Semiconductor

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