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C5801

NEC
Part Number C5801
Manufacturer NEC
Description 2SC5801
Published Nov 4, 2005
Detailed Description www.DataSheet4U.com DATA SHEET NPN SILICON RF TRANSISTOR 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOI...
Datasheet PDF File C5801 PDF File

C5801
C5801


Overview
www.
DataSheet4U.
com DATA SHEET NPN SILICON RF TRANSISTOR 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin lead-less minimold package ORDERING INFORMATION Part Number 2SC5801 2SC5801-T3 Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 9.
0 5.
5 1.
5 100 140 150 −65 to +150 Unit V V V mA mW °C °C Tj Tstg 2 Note Mounted on 1.
08 cm × 1.
0 mm (t) glass epoxy PCB Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
P15661EJ1V0DS00 (1st edition) Date Published July 2001 NS CP(K) Printed in Japan © 2001 www.
DataSheet4U.
com 2SC5801 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product (1) Gain Bandwidth Product (2) Insertion Power Gain (1) Insertion Power Gain (2) Noise Figure Reverse Transfer Capacitance fT fT S21e 2 Symbol Test Conditions MIN.
TYP.
MAX.
Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VBE = 1 V, IC = 0 mA VCE = 1 V, IC = 5 mA – – 100 – – 120 600 600 145 nA nA – VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 1 V, IC = 15 m...


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