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C5803

Inchange Semiconductor
Part Number C5803
Manufacturer Inchange Semiconductor
Description 2SC5803
Published Dec 22, 2009
Detailed Description INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5803 DESCRIPTION ·High Breakdow...
Datasheet PDF File C5803 PDF File

C5803
C5803

Overview
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5803 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high voltage color display horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage www.
DataSheet4U.
com w w s c s i .
w VALUE UNIT 1500 V 800 V 6 V 12 A 24 A 70 W n c .
i m e IC Collector Current- Continuous ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.
iscsemi.
cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5803 TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A B 3.
0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A B 1.
5 V ICES Collector Cutoff Current VCE= 1400V; VBE= 0 1.
0 mA ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain Switching Times tstg Storage Time www.
DataSheet4U.
com tf Fall Time w .
w w IC= 8A; VCE= 5V n c .
i m e s c is 15 5.
5 1.
0 mA 40 8.
5 4.
0 μs IC= 7A, IB1= 1.
4A; IB2= -2.
8A; VCC= 200V; RL= 28.
6Ω 0.
3 μs isc Website：www.
iscsemi.
cn 2 ...


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