P1203BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V ID 35A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 35 Continuous Drain Current TC = 100 °C TA = 25 °C ID 22 12 Pulsed Drain Current1 TA = 70 °C IDM 10 95 Avalanche Current IAS 28 Avalanche Energy L = 0.
1mH EAS 39 TC = 25 °C 25 Power Dissipation TC = 100 °C TA = 25 °C PD 10 3 TA = 70 °C 2 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C Ver 1.
0 1 2012/10/22 P1203BEA N-Channel Enhancemen...

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