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P1203BV

UNIKC
Part Number P1203BV
Manufacturer UNIKC
Description N-Channel Enhancement Mode MOSFET
Published Mar 18, 2013
Detailed Description P1203BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 12mΩ @VGS = 10V ID 11A SOP- 08 ABSOLUTE...
Datasheet PDF File P1203BV PDF File

P1203BV
P1203BV

Overview
P1203BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 12mΩ @VGS = 10V ID 11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation 1,2 http://www.
DataSheet4U.
net/ SYMBOL VDS VGS LIMITS 30 ±20 11 7 40 28 40 2.
5 1 -55 to 150 UNITS V TA = 25 ° C TA = 100 ° C ID IDM IAS A L = 0.
1mH TA = 25 ° C TA = 100 ° C EAS PD TJ, TSTG mJ W ° C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 SYMBOL RqJC RqJA TYPICAL MAXIMUM 25 50 UNITS ° C/W Pulse width limited by maximum junction temperature.
Limited only by maximum temperature allowed Ver 1.
0 1 2012/4/13 datasheet pdf - http://www.
DataSheet4U.
net/ P1203BV N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge 2 2 LIMITS MIN 30 1 1.
8 3 ±100 1 10 70 14 8.
5 40 846 17.
5 12 TYP MAX UNIT V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V , TJ = 125 ° C VDS = 10V, VGS = 10V VGS = 4.
5V, ID = 11A VGS = 10V, ID = 11A VDS = 5V, ID = 10A DYNAMIC VGS = 0V, VDS = 20V, f = 1MHz http://www.
DataSheet4U.
net/ V nA mA A mΩ S 225 126 1.
65 17 2.
7 4 9 40 20 6 1.
9 pF Ω nC VGS = 0V, VDS = 0V, f = 1MHz VDS = 0.
5V(BR)DSS, ID = 8.
8A, VGS = 10V Gate-Source Charge Gate-Drain Charge Rise Time Fall Time2 Continuous Current 2 2 Tur...


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