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P1203BE

UNIKC
Part Number P1203BE
Manufacturer UNIKC
Description MOSFET
Published Feb 3, 2017
Detailed Description P1203BE N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V ID 9A PDFN 3x3S AB...
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P1203BE
P1203BE

Overview
P1203BE N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V ID 9A PDFN 3x3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 36 Continuous Drain Current TC = 100 °C TA = 25 °C ID 22 9 Pulsed Drain Current1 TA = 70 °C IDM 7 108 Avalanche Current IAS 28 Avalanche Energy L = 0.
1mH EAS 39 TC = 25 °C 25 Power Dissipation TC = 100 °C TA = 25 °C PD 10 1.
6 TA = 70 °C 1 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C REV 1.
0 1 2016/12/18 P1203BE N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA RqJC TYPICAL MAXIMUM UNITS 75 °C / W 3.
6 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYM...


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