2SA1900U
PNP Silicon Epitaxial Planar
Transistor
Medium power
transistor
Absolute Maximum Ratings (Ta = 25℃) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current (Pw = 20 ms)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
1) When mounted on a 40 x 40 x 0.
7 mm ceramic board.
Characteristics at Ta = 25℃ Parameter
DC Current Gain at -VCE = 3 V, -IC = 500 mA Collector Base Cutoff Current at -VCB = 40 V Emitter Base Cutoff Current at -VEB = 4 V Collector Base Breakdown Voltage at -IC = 50 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 50 µA Collector Emitter Sa...