CY62148G MoBL® 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed: 45 ns/55 ns ■ Ultra-low standby power ❐ Typical standby current: 3.
5 μA ❐ Maximum standby current: 8.
7 μA ■ Embedded ECC for single-bit error correction[1] ■ Wide voltage range: 1.
65 V to 2.
2 V, 2.
2 V to 3.
6 V, 4.
5 V to 5.
5 V ■ 1.
0-V data retention ■ TTL-compatible inputs and outputs ■ Pb-free 32-pin SOIC and 32-pin TSOP II packages Functional Description CY62148G is a high-performance CMOS low-power (MoBL) SRAM device with embedded ECC[1].
This device is offered multiple pin configurations.
Device is accessed ...

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