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CY62146ESL

Cypress Semiconductor
Part Number CY62146ESL
Manufacturer Cypress Semiconductor
Description 4-Mbit (256K x 16) Static RAM
Published Jan 6, 2011
Detailed Description CY62146ESL MoBL® 4-Mbit (256K x 16) Static RAM Features ■ ■ ■ Very high speed: 45 ns Wide voltage range: 2.2V–3.6V and...
Datasheet PDF File CY62146ESL PDF File

CY62146ESL
CY62146ESL

Overview
CY62146ESL MoBL® 4-Mbit (256K x 16) Static RAM Features ■ ■ ■ Very high speed: 45 ns Wide voltage range: 2.
2V–3.
6V and 4.
5V–5.
5V Ultra low standby power ❐ Typical Standby current: 1 μA ❐ Maximum Standby current: 7 μA Ultra low active power ❐ Typical active current: 2 mA at f = 1 MHz Easy memory expansion with CE and OE features Automatic power down when deselected CMOS for optimum speed and power Available in Pb-free 44-pin TSOP II package mode reduces power consumption by more than 99% when deselected (CE HIGH).
The input and output pins (IO0 through IO15) are placed in a high impedance state when: ■ ■ ■ ■ Deselected (CE HIGH) Outputs are disabled (OE HIGH) Both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH) Write operation is active (CE LOW and WE LOW) ■ ■ ■ ■ ■ To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW.
If Byte Low Enable (BLE) is LOW, then data from IO pins (IO0 through IO7) is written into the location specified on the address pins (A0 through A17).
If Byte High Enable (BHE) is LOW, then data from IO pins (IO8 through IO15) is written into the location specified on the address pins (A0 through A17).
To read from the device, take Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH.
If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on IO0 to IO7.
If Byte High Enable (BHE) is LOW, then data from memory appears on IO8 to IO15.
See the “Truth Table” on page 10 for a complete description of read and write modes.
For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.
Functional Description The CY62146ESL is a high performance CMOS static RAM organized as 256K words by 16 bits.
This device features advanced circuit design to provide ultra low active current.
This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones.
The ...


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