2SK2737 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10 mΩ typ.
• 4V gate drive devices.
• High speed switching Outline TO–220CFM ADE-208-533B(Z) 3rd.
Edition Jun 1998 D G 123 1.
Gate 2.
Drain 3.
Source S 2SK2737 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Ratings 30 ±20 45 180 45 30 150 –55 to +150 Unit V V A A A W °C °C Electrical...

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