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K2718

Toshiba Semiconductor
Part Number K2718
Manufacturer Toshiba Semiconductor
Description 2SK2718
Published Jan 18, 2006
Detailed Description 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2718 DC−DC Converter and Motor Drive A...
Datasheet PDF File K2718 PDF File

K2718
K2718

Overview
2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 5.
6 Ω (typ.
) : |Yfs| = 2.
0 S (typ.
) Unit: mm : IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 2.
5 7.
5 40 216 2.
5 4.
0 www.
DataSheet.
co.
kr Unit V V V A A W mJ A mJ °C °C Pulse (Note 1) Drai...


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