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K2719

Toshiba Semiconductor
Part Number K2719
Manufacturer Toshiba Semiconductor
Description N-Channel MOS Type Field Effect Transistor
Published Jun 1, 2014
Detailed Description 2SK2719 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK2719 Chopper Regulator, DC-DC Converte...
Datasheet PDF File K2719 PDF File

K2719
K2719

Overview
2SK2719 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK2719 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.
7 Ω (typ.
) High forward transfer admittance: |Yfs| = 2.
6 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics S Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) V Gate-source voltage DC Drain current (Note 1) Pulse (Note 1) ymbol VDSS DGR Rating 900 900 ±30 3 Unit V V V 1.
Gate 2.
Drain (heat sink) 3.
Source VGSS ID IDP PD EAS IAR (Note 3) EAR Tch Tst...


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