2SK2828
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching
regulator and DC–DC converter • Avalanche ratings
Outline
TO–3P
ADE-208-514 C (Z) 4th.
Edition Feb 1999
D 2
1 G
1 2
33
S
1.
Gate 2.
Drain
(Flange) 3.
Source
2SK2828
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation
VDSS VGSS ID I *1
D(pulse)
I DR Pch*2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C
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