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K2826

NEC
Part Number K2826
Manufacturer NEC
Description 2SK2826
Published Mar 10, 2015
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This produc...
Datasheet PDF File K2826 PDF File

K2826
K2826

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES • Super Low On-State Resistance RDS(on)1 = 6.
5 mΩ (MAX.
) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.
7 mΩ (MAX.
) (VGS = 4.
0 V, ID = 35 A) • Low Ciss : Ciss = 7200 pF (TYP.
) • Built-in Gate Protection Diode ORDERING INFORMATION PART NUMBER 2SK2826 2SK2826-S 2SK2826-ZJ PACKAGE TO-220AB TO-262 TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS(AC) Gate to Source Voltage (VDS = 0 V) VGSS(DC) Drain Current (DC) Drain Current (Pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT Total Power Dissipation (TA = 25°C) PT Channel Temperature Tch Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg IAS EAS 60 ±20 +20, –10 ±70 ±280 100 1.
5 150 –55 to + 150 70 490 V V V A A W W °C °C A mJ Notes 1.
PW ≤ 10 µ s, Duty cycle ≤ 1 % 2.
Starting Tch = 25 °C, RA = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.
25 °C/W 83.
3 °C/W The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D11273EJ2V0DS00 (2nd edition) Date Published April 1999 NS CP(K) Printed in Japan The mark • shows major revised points.
© 1998 2SK2826 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS • Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 35 A RDS(on)2 VGS = 4.
0 V, ID = 35 A Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA Forward Transfer Admittance | yfs | VDS = 10 V, ID = 35 A Drain Leakage C...


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