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K2800

Hitachi Semiconductor
Part Number K2800
Manufacturer Hitachi Semiconductor
Description 2SK2800
Published Oct 10, 2008
Detailed Description 2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th. Edition Jun 1998 Features www.DataSh...
Datasheet PDF File K2800 PDF File

K2800
K2800

Overview
2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th.
Edition Jun 1998 Features www.
DataSheet4U.
com • Low on-resistance R DS(on) = 15 mΩ typ.
• High speed switching • Low drive current • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1.
Gate 2.
Drain (Flange) 3.
Source 2SK2800 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature www.
DataSheet4U.
com Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note 3 Note 3 Note 2 Note1 Ratings 60 ±20 40 160 40 40 137 50 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50Ω 2 2SK2800 Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 ±20 — — 1.
5 — — 20 — — — — — — — — — Typ — — — — — 15 25 35 1500 720 200 20 180 200 200 0.
95 70 Max — — ±10 10 2.
5 20 40 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V V I F = 40A, VGS = 0 I F = 40A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 20A, VGS = 10V Note4 I D = 20A, VGS = 4V Note4 I D = 20A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D = 20A, RL = 1.
5Ω VGS = 10V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance www.
DataSheet4U.
com V(BR)GSS I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse ...


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