Part Number
|
HFD2N60U |
Manufacturer
|
SemiHow |
Description
|
N-Channel MOSFET |
Published
|
Apr 14, 2017 |
Detailed Description
|
HFD2N60U_HFU2N60U
HFD2N60U / HFU2N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugg...
|
Datasheet
|
HFD2N60U
|
Overview
HFD2N60U_HFU2N60U
HFD2N60U / HFU2N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.
5 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 4 ȍ7\S#9GS=10V 100% Avalanche Tested
May 2014
BVDSS = 600 V RDS(on) typ = 4 ȍ ID = 1.
8 A
D-PAK I-PAK
2
1 3
HFD2N60U
1 2 3
HFU2N60U
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC...
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