Part Number
|
SW1N60L |
Manufacturer
|
SEMIPOWER |
Description
|
MOSFET |
Published
|
Apr 20, 2017 |
Detailed Description
|
SAMWIN
SW1N60L
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 23 Ω)@VGS=10V ■ Gate Charge (Max 4.5nC) ■ I...
|
Datasheet
|
SW1N60L
|
Overview
SAMWIN
SW1N60L
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 23 Ω)@VGS=10V ■ Gate Charge (Max 4.
5nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-92
1 2 3
1.
Gate 2.
Drain 3.
Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power MOSFET is usually used at AC adaptors and SMPS.
BVDSS : 600V ID : 0.
3A RDS(ON) : 23ohm
2
1
3
Order Codes
Item 1
Sales Type SW C 1N60L
Marking SW1N60L
Package TO-92
Packaging TAPE
Absolute maximum ...
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