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SW1N60

Part Number	SW1N60
Manufacturer	SEMIPOWER
Description	MOSFET
Published	Apr 20, 2017
Detailed Description	SAMWIN SW1N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Impr...
Datasheet	SW1N60 PDF File

Overview

SAMWIN SW1N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-251 TO-252 TO-126 12 3 12 3 12 3 1.
Gate 2.
Drain 3.
Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
BVDSS : 600V ID : 1.
0A RDS(ON) : 12ohm 2 1 3 Order Codes Item 1 2 3 Sales Typ...

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