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SW1N60L

SEMIPOWER
Part Number SW1N60L
Manufacturer SEMIPOWER
Description MOSFET
Published Apr 20, 2017
Detailed Description SAMWIN SW1N60L N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 23 Ω)@VGS=10V ■ Gate Charge (Max 4.5nC) ■ I...
Datasheet PDF File SW1N60L PDF File

SW1N60L
SW1N60L


Overview
SAMWIN SW1N60L N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 23 Ω)@VGS=10V ■ Gate Charge (Max 4.
5nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-92 1 2 3 1.
Gate 2.
Drain 3.
Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power MOSFET is usually used at AC adaptors and SMPS.
BVDSS : 600V ID : 0.
3A RDS(ON) : 23ohm 2 1 3 Order Codes Item 1 Sales Type SW C 1N60L Marking SW1N60L Package TO-92 Packaging TAPE Absolute maximum ...



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