N‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.
)
12mΩ
ID 12A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB12N03G
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
12 10 48
Avalanche Current
IAS 12
Avalanche Energy Repetitive Avalanche Energy2
L = 0.
1mH, ID=12A, RG=25Ω
L = 0.
05mH
EAS EAR
7.
2 3.
6
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range...