WNM3003
N-Channel, 30V, 4.
0A, Power MOSFET
WNM3003
Http://www.
willsemi.
com
V(BR)DSS 30V
Rds(on) ()
0.
033@ 10V 0.
033@ 10V 0.
043 @ 4.
5V
Descriptions
The WNM3003 is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion and power switch applications.
Standard Product WNM3003 is Pb-free.
Features
SOT-23 D 3
12 GS Configuration (Top View)
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23
WT3*
WT3 *
= Device Code = Month (A~Z) Marking
App...