DatasheetsPDF.com

WNM3025

Part Number	WNM3025
Manufacturer	WillSEMI
Description	MOSFET
Published	May 1, 2017
Detailed Description	WNM3025 Single N-Channel, 30V, 0.23A, Power MOSFET VDS (V) 30 Typical RDS(on) (Ω) 1.2 @VGS=10V 1.4 @VGS=4.5V WNM3025 ...
Datasheet	WNM3025 PDF File

Overview

WNM3025 Single N-Channel, 30V, 0.
23A, Power MOSFET VDS (V) 30 Typical RDS(on) (Ω) 1.
2 @VGS=10V 1.
4 @VGS=4.
5V WNM3025 Http://www.
sh-willsemi.
com G S D Descriptions The WNM3025 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM3025 is Pb-free.
DFN1006-3L D Features GS  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package DFN1006-3L Applications  DC/DC converters  Power supply converters circuit  Load/Power Switching for portable device Pin configuration (Top view) J = Device Code * = Month(A~z) Marking Order information Device Package Shipping WNM3025-3/TR DFN1006-3L 10K/Tape&Reel Will Semiconductor Ltd.
1 2016/10/21- Rev.
1.
0 Absolute Maximum ratings Parameter Drain-Source ...

Similar Datasheet

WNM3003 N-Channel MOSFET - Will Semiconductor
WNM3003 N-Channel MOSFET - TY Semiconductor
WNM3008 N-Channel MOSFET - Will Semiconductor
WNM3008 N-Channel MOSFET - TY Semiconductor
WNM3011 N-Channel MOSFET - Will Semiconductor
WNM3013 N-Channel MOSFET - Will Semiconductor
WNM3017 MOSFET - WillSEMI
WNM3018 MOSFET - WillSEMI
WNM3019 MOSFET - WillSEMI
WNM3025 MOSFET - WillSEMI

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)