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WNM3008

Will Semiconductor
Part Number WNM3008
Manufacturer Will Semiconductor
Description N-Channel MOSFET
Published Apr 29, 2017
Detailed Description WNM3008 Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) 30 Rds(on) (ȍ) 0.044@ VGS=10V 0.057@ VGS=4.5V WNM3008 Http...
Datasheet PDF File WNM3008 PDF File

WNM3008
WNM3008


Overview
WNM3008 Single N-Channel, 30V, 3.
1A, Power MOSFET VDS (V) 30 Rds(on) (ȍ) 0.
044@ VGS=10V 0.
057@ VGS=4.
5V WNM3008 Http//:www.
willsemi.
com Descriptions The WNM3008 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM3008 is Pb-free.
Features SOT-23 D 3 12 GS Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 Applications z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit z Power Switch z Load Switch z Charging W38* W38 * = Device Code = Month Marking Order information Device Package Shipping WNM3008-3/TR SOT-23 3000/Reel&Tape Will Semiconductor Ltd.
1 Feb, 2012 - Rev.
1.
2 Absolute Maximum ratings Parameter Drain-Sou...


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