WNM3017
Single N-Channel, 30V, 6.2A, Power MOSFET
VDS (V) 30
Typical RDS(on) (mΩ) 17 @ VGS=10V
Descriptions
The WNM3017 is N-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM3017 is Pb-free.
WNM3017
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DFN2x2-6L
Features
Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package DFN2x2-6L
Applications
DC/DC converters Power supply converters c...