WNM3019
Small Signal N-Channel, 30V, 0.
2A, MOSFET
VDS (V) Typical Rds(on) (Ω) 1.
2@ VGS=10V
30 1.
4@ VGS=4.
5V 1.
9@ VGS=2.
5V
ESD Rating: 2000V HBM
Descriptions
The WNM3019 is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in small signal switch.
Standard Product WNM3019 is Pb-free and Halogen-free.
WNM3019
Http://www.
sh-willsemi.
com
Pin configuration (Top view)
Features
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current HBM ESD protection 2 kV Small package SOT-523
Applications
Driver: Relay, Solenoid, Lamp...