WNM3025
Single N-Channel, 30V, 0.
23A, Power MOSFET
VDS (V) 30
Typical RDS(on) (Ω)
1.
2 @VGS=10V 1.
4 @VGS=4.
5V
WNM3025
Http://www.
sh-willsemi.
com
G S
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Descriptions
The WNM3025 is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM3025 is Pb-free.
DFN1006-3L
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Features
GS
Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package DFN1006-3L
Applications
DC/DC converters Power supply converters circuit Load/Power...