isc Silicon
PNP Power
Transistor
DESCRIPTION ·DC Current Gain -
: hFE = 40@ IC= -0.
5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min) ·Complement to Type BD907 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-15
ICM
Collector Current-Peak
-20
IB
Base Current
-5
PC
Collector Power Dissipation @ TC=25℃
90
TJ
Junction Temperature
150
Tstg
St...