.
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
@Total Device Dissipation T"c = 25°C
Derate above 25°C Storage Temperature
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Symbol vCEO VCBO VEBO
pd
T stg
Value 80 80 3.
5 2.
5 14.
3
- 60 to + 200
Unit Volts Volts Volts Watts
mW/"C
°C
Symbol R&jc
Max
70
Unit °C/W
MRF532
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY
TRANSISTOR
PNP SILICON
f
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 10 mA)
Collector-Base Breakdown Voltage dC = 0.
1 mA)
Emitter-Base Breakdown Voltage E...