MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Peak
Total Device Dissipation C« Tq = 75°C Derate above 75°C
Storage Temperature
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Symbol vCEO VCBO v EBO
ic
PD
T stg
Value 12 20 3.
0 50 500 4.
0
-65 to +200
Unit Vdc Vdc Vdc
mAdc
mW
mW/°C
°C
Symbol R 0JC
Max
250
Unit °C/W
MRF912
CASE 303-01, STYLE 1 HIGH FREQUENCY
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted.
)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 1.
0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage dC = 0.
1 mAdc, El = 0)
Emi...