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MRF9002R2

Motorola Inc
Part Number MRF9002R2
Manufacturer Motorola Inc
Description RF Power Field Effect Transistor Array
Published Apr 16, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9002R2/D The RF Sub - ...
Datasheet PDF File MRF9002R2 PDF File

MRF9002R2
MRF9002R2

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF9002R2/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.
0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.
0 GHz.
The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
The device is in a PFP - 16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact.
• Typical Performance at 960 MHz, 26 Volts Output Power — 2 Watts Per Transistor Power Gain — 18 dB Efficiency — 50% • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Eq...


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