isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2N5108
DESCRIPTION ·High Current-Gain Bandwidth Product
: fT= 1200MHz (Min) @VCE = 10V,IE = 50mA ·Low Saturation Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose Class C amplifier applications
up to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
55
V
VCEO Collector-Emitter Voltage
35
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current
Collector Power Dissipation @TC=25℃
PC Collector Power Dissipation @Ta=25℃
Tj
Junction Temperature
0.
4
A
3.
5 W
1.
0
175
...