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2N5108

Part Number	2N5108
Manufacturer	Advanced Semiconductor
Description	NPN SILICON HIGH FREQUENCY TRANSISTOR
Published	Mar 22, 2005
Detailed Description	2N5108 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5108 is a Designed for General Purpose Class C Amplifie...
Datasheet	2N5108 PDF File

Overview

2N5108 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz.
PACKAGE STYLE TO-39 FEATURES: • GPE = 6.
0 dB Typ.
at 1.
0 GHz • FT = 1,500 MHz Typ.
at 15 V/ 50 mA • Hermetic TO-39 Package MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC 400 mA 55 V 30 V 3.
5 W @ TC = 25 C -65 to +200 C -65 to +200 C 50 C/W O O O O 1 = Emitter 2 = Base 3 = Collector CHARACTERISTICS SYMBOL BVCER BVEBO ICES ICEO ft COB GPE ηC IE = 100 µA VCE = 50 V VCE = 15 V VCE = 15 V VCE = 15 V VCB = 30 V VCC = 28 V IC = 5.
0 mA TA = 25 C O NONE TEST CONDITIONS RBE = 10Ω MINIMUM 55 3.
0 TYPICAL MAXIMUM UNITS V V 1.
0 TC = +150 C O µA mA µA MHz 10.
0 20 IC = 50 mA f = 200 MHz f = 1.
0 MHz 1200 3.
0 5.
0 35 pF dB % POUT = 1.
0 W f = 200 MHz A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...

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